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BZT52C5V6-E3-08

BZT52C5V6-E3-08

BZT52C5V6-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 10Ohm ±5% 5.6V 100nA @ 1V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52C5V6-E3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2015
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance10Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 1V
Power Dissipation500mW
Max Reverse Leakage Current 100nA
Impedance-Max 10Ohm
Test Current 5mA
Reference Voltage5.6V
Zener Voltage 5.6V
Voltage Tol-Max 7.14%
Voltage Tolerance5%
ESD Protection Yes
Zener Current59mA
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:24822 items

Pricing & Ordering

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BZT52C5V6-E3-08 Product Details

BZT52C5V6-E3-08 Overview


An electrical device such as this requires reverse leakage current of 100nA @ 1V.A voltage of 7.14% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 100nA.Design-wise, diode is highly flexible, wdiodeh a zener current of 59mA.

BZT52C5V6-E3-08 Features


reverse leakage current of 100nA @ 1V
100nA @ 1V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 59mA


BZT52C5V6-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C5V6-E3-08 applications of zener single diodes.


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