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BZT52C56-E3-08

BZT52C56-E3-08

BZT52C56-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 135Ohm ±5% 56V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52C56-E3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance135Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Power Dissipation410mW
Max Reverse Leakage Current 100nA
Impedance-Max 135Ohm
Reference Voltage56V
Zener Voltage 56V
Voltage Tol-Max 7.14%
Working Test Current 2.5mA
Voltage Tolerance5%
RoHS StatusROHS3 Compliant
In-Stock:223048 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZT52C56-E3-08 Product Details

BZT52C56-E3-08 Overview


A voltage of 7.14% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 100nA.Setting the working test voltage to 2.5mA is required to operate this device.

BZT52C56-E3-08 Features


Reverse leakage current reaches 100nA
the working test voltage to 2.5mA
minimal dynamic impedance is 2.5mA


BZT52C56-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C56-E3-08 applications of zener single diodes.


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