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BZT52C4V3-E3-08

  • BZT52C4V3-E3-08 - ZENER DIODE 80Ohm ±5% 4.3V -55°C~150°C 410mW 2 Terminations SOD-123
  • BZT52C4V3-E3-08 - ZENER DIODE 80Ohm ±5% 4.3V -55°C~150°C 410mW 2 Terminations SOD-123

BZT52C4V3-E3-08

BZT52C4V3-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±5% 4.3V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52C4V3-E3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance80Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Power Dissipation500mW
Max Reverse Leakage Current 100nA
Impedance-Max 80Ohm
Test Current 5mA
Reference Voltage4.3V
Zener Voltage 4.3V
Voltage Tol-Max 6.98%
Voltage Tolerance5%
ESD Protection Yes
Zener Current84mA
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:25481 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZT52C4V3-E3-08 Product Details

BZT52C4V3-E3-08 Overview


A maximum voltage (Tol) can be supplied if 6.98% is set.During reverse leakage, the maximum current reaches 100nA.Design flexibility is enhanced by its zener current of 84mA.

BZT52C4V3-E3-08 Features


Reverse leakage current reaches 100nA
the zener current of 84mA


BZT52C4V3-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C4V3-E3-08 applications of zener single diodes.


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