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BZT52C3V9-G3-08

BZT52C3V9-G3-08

BZT52C3V9-G3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±5% 3.9V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52C3V9-G3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance80Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Power Dissipation410mW
Max Reverse Leakage Current 100nA
Impedance-Max 80Ohm
Reference Voltage3.9V
Zener Voltage 3.9V
Voltage Tol-Max 5.13%
Working Test Current 5mA
Voltage Tolerance5%
Zener Current92mA
RoHS StatusROHS3 Compliant
In-Stock:181783 items

Pricing & Ordering

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BZT52C3V9-G3-08 Product Details

BZT52C3V9-G3-08 Overview


A voltage of 5.13% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 100nA.Design-wise, diode is highly flexible, wdiodeh a zener current of 92mA.Setting the working test voltage to 5mA is required to operate this device.

BZT52C3V9-G3-08 Features


Reverse leakage current reaches 100nA
the zener current of 92mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52C3V9-G3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C3V9-G3-08 applications of zener single diodes.


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