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BZT52C18-E3-08

BZT52C18-E3-08

BZT52C18-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 18Ohm ±5% 18V 100nA @ 14V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52C18-E3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance18Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 14V
Power Dissipation410mW
Max Reverse Leakage Current 100nA
Impedance-Max 18Ohm
Test Current 5mA
Reference Voltage18V
Zener Voltage 18V
Voltage Tol-Max 6.41%
Voltage Tolerance5%
ESD Protection Yes
Zener Current18mA
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:29030 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZT52C18-E3-08 Product Details

BZT52C18-E3-08 Overview


An electrical device like this requires a reverse leakage current of 100nA @ 14V.A maximum voltage (Tol) can be supplied if 6.41% is set.During reverse leakage, the maximum current reaches 100nA.Design flexibility is enhanced by its zener current of 18mA.

BZT52C18-E3-08 Features


reverse leakage current of 100nA @ 14V
100nA @ 14V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 18mA


BZT52C18-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52C18-E3-08 applications of zener single diodes.


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