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BZT52B3V0-E3-08

BZT52B3V0-E3-08

BZT52B3V0-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 80Ohm ±2% 3V -55°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B3V0-E3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2017
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance80Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Power Dissipation500mW
Max Reverse Leakage Current 100nA
Impedance-Max 80Ohm
Reference Voltage3V
Zener Voltage 3V
Voltage Tol-Max 2%
Working Test Current 5mA
Voltage Tolerance2%
Zener Current118mA
RoHS StatusROHS3 Compliant
In-Stock:21616 items

Pricing & Ordering

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BZT52B3V0-E3-08 Product Details

BZT52B3V0-E3-08 Overview


Voltage (Tol) 2% is the maximum possible.Reverse leakage currents can reach 100nA.In terms of design, diode has a high degree of flexibildiodey thanks to diodes 118mA zener current.This device should be operated with a 5mA working test voltage.

BZT52B3V0-E3-08 Features


Reverse leakage current reaches 100nA
the zener current of 118mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52B3V0-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B3V0-E3-08 applications of zener single diodes.


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