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BZT52B27-E3-18

BZT52B27-E3-18

BZT52B27-E3-18

Vishay Semiconductor Diodes Division

30Ohms ±2% 27V 100nA @ 20V -55°C~150°C 410mW SOD-123

SOT-23

BZT52B27-E3-18 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Supplier Device Package SOD-123
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2016
Tolerance ±2%
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Max Power Dissipation410mW
Impedance30Ohm
Current - Reverse Leakage @ Vr 100nA @ 20V
Power Dissipation500mW
Power - Max 410mW
Max Reverse Leakage Current 100nA
Impedance-Max 30Ohms
Voltage - Zener (Nom) (Vz) 27V
Zener Voltage 27V
Voltage Tolerance2%
Zener Current12mA
RoHS StatusROHS3 Compliant
In-Stock:222565 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZT52B27-E3-18 Product Details

BZT52B27-E3-18 Overview


The reverse leakage current needed to power this electric device is 100nA @ 20V.The reverse leakage current reaches zero at its maximum.As part of the operation, the maximum voltage - Zener (Nom) is reduced to 27V.A zener current of 12mA makes it highly flexible in terms of design.

BZT52B27-E3-18 Features


reverse leakage current of 100nA @ 20V
100nA @ 20V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 12mA


BZT52B27-E3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B27-E3-18 applications of zener single diodes.


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