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BZT52B15-E3-18

BZT52B15-E3-18

BZT52B15-E3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 11Ohm ±2% 15V 100nA @ 11V -65°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B15-E3-18 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-65°C~150°C
PackagingTape & Reel (TR)
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance11Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 11V
Power Dissipation500mW
Max Reverse Leakage Current 100nA
Impedance-Max 11Ohm
Reference Voltage15V
Zener Voltage 15V
Voltage Tol-Max 2%
Working Test Current 5mA
Voltage Tolerance2%
Zener Current23mA
RoHS StatusROHS3 Compliant
In-Stock:22327 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZT52B15-E3-18 Product Details

BZT52B15-E3-18 Overview


A reverse leakage current of 100nA @ 11V is required to supply this electrical device.Voltage (Tol) is limited to 2%.100nA is the maximum reverse leakage current.The design is highly flexible due to the zener current of 23mA.To operate this device, set the working test voltage to 5mA.

BZT52B15-E3-18 Features


reverse leakage current of 100nA @ 11V
100nA @ 11V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 23mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


BZT52B15-E3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B15-E3-18 applications of zener single diodes.


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