Name: BZT52B12-E3-08
Brand: Vishay Semiconductor Diodes Division
SKU: BZT52B12-E3-08
Price: 0.33000 USD
Availability: InStock

new-10%

BZT52B12-E3-08

Manufacturer part number:BZT52B12-E3-08

Manufacturer:Vishay Semiconductor Diodes Division

Description:ZENER DIODE 7Ohm ±2% 12V 100nA @ 9V -65°C~150°C 410mW 2 Terminations SOD-123

Case Package:SOT-23

Datasheet:BZT52B12-E3-08 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOD-123
Number of Pins	2
Diode Element Material	SILICON
Operating Temperature	-65°C~150°C
Packaging	Tape & Reel (TR)
Published	2016
Tolerance	±2%
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
HTS Code	8541.10.00.50
Max Power Dissipation	410mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	10
Pin Count	2
Number of Elements	1
Polarity	UNIDIRECTIONAL
Impedance	20Ohm
Element Configuration	Single
Diode Type	ZENER DIODE
Current - Reverse Leakage @ Vr	100nA @ 9V
Power Dissipation	500mW
Max Reverse Leakage Current	100nA
Impedance-Max	7Ohm
Test Current	5mA
Reference Voltage	12V
Zener Voltage	12V
Voltage Tol-Max	1.67%
Voltage Tolerance	2%
ESD Protection	Yes
Zener Current	28mA
RoHS Status	ROHS3 Compliant

BZT52B12-E3-08 Product Details

BZT52B12-E3-08 Overview

It is necessary to supply this electrical device with a reverse leakage current of 100nA @ 9V.A voltage of 1.67% indicates the maximum voltage (Tol) that can be supplied.Reverse leakage current reaches a maximum of 100nA.The design flexibility of this device is extremely high since its zener current is 28mA.