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BZT52B11-E3-08

BZT52B11-E3-08

BZT52B11-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 6Ohm ±2% 11V 100nA @ 8.5V -65°C~150°C 410mW 2 Terminations SOD-123

SOT-23

BZT52B11-E3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123
Number of Pins 2
Diode Element Material SILICON
Operating Temperature-65°C~150°C
PackagingTape & Reel (TR)
Published 2017
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.10.00.50
Max Power Dissipation410mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance20Ohm
Element ConfigurationSingle
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8.5V
Power Dissipation500mW
Max Reverse Leakage Current 100nA
Impedance-Max 6Ohm
Test Current 5mA
Reference Voltage11V
Zener Voltage 11V
Voltage Tolerance2%
ESD Protection Yes
Zener Current30mA
RoHS StatusROHS3 Compliant
In-Stock:24353 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.33000$0.33
500$0.3267$163.35
1000$0.3234$323.4
1500$0.3201$480.15
2000$0.3168$633.6
2500$0.3135$783.75

BZT52B11-E3-08 Product Details

BZT52B11-E3-08 Overview


It is necessary to supply this electrical device with a reverse leakage current of 100nA @ 8.5V.Reverse leakage current reaches a maximum of 100nA.The design flexibility of this device is extremely high since its zener current is 30mA.

BZT52B11-E3-08 Features


reverse leakage current of 100nA @ 8.5V
100nA @ 8.5V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the zener current of 30mA


BZT52B11-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZT52B11-E3-08 applications of zener single diodes.


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