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BZD17C8V2P-E3-18

BZD17C8V2P-E3-18

BZD17C8V2P-E3-18

Vishay Semiconductor Diodes Division

8.2V 10μA @ 3V -55°C~150°C 800mW DO-219AB

SOT-23

BZD17C8V2P-E3-18 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-219AB
Number of Pins 2
Supplier Device Package DO-219AB (SMF)
Operating Temperature-55°C~150°C
PackagingTape & Reel (TR)
Published 2009
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Max Power Dissipation800mW
Impedance2Ohm
Element ConfigurationSingle
Current - Reverse Leakage @ Vr 10μA @ 3V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 200mA
Power - Max 800mW
Max Reverse Leakage Current 10μA
Test Current 100mA
Voltage - Zener (Nom) (Vz) 8.2V
Zener Voltage 8.2V
ESD Protection No
RoHS StatusROHS3 Compliant
In-Stock:40850 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BZD17C8V2P-E3-18 Product Details

BZD17C8V2P-E3-18 Overview


In order to supply this electrical device, a reverse leakage current of 10μA @ 3V is required.A reverse leakage current that reaches 10μA is the maximum.Zener (Nom) voltage is reduced to 8.2V during operation.1.2V @ 200mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.

BZD17C8V2P-E3-18 Features


reverse leakage current of 10μA @ 3V
10μA @ 3V is the maximum voltage (Tol)
Reverse leakage current reaches 10μA


BZD17C8V2P-E3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZD17C8V2P-E3-18 applications of zener single diodes.


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