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BA783-HG3-08

BA783-HG3-08

BA783-HG3-08

Vishay Semiconductor Diodes Division

PIN - Single 1.2pF @ 3V 1MHz 125°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SOD-123

SOT-23

BA783-HG3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SOD-123
Surface MountYES
Weight 10.290877mg
Diode Element Material SILICON
Operating Temperature125°C TJ
PackagingTape & Reel (TR)
Published 2015
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code8541.10.00.60
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 10
Pin Count2
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G2
Number of Elements 1
Max Current Rating 100mA
Element ConfigurationSingle
Diode Type PIN - Single
Forward Current100mA
Output Current-Max 0.1A
Forward Voltage1V
Peak Reverse Current50nA
Capacitance @ Vr, F 1.2pF @ 3V 1MHz
Voltage - Peak Reverse (Max) 35V
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Resistance @ If, F 1.2Ohm @ 3mA 1GHz
Diode Capacitance-Max 1.2pF
RoHS StatusROHS3 Compliant
In-Stock:4778 items

BA783-HG3-08 Product Details

BA783-HG3-08 Overview


A forward voltage of over 1V is recommended for the system.The maximum peak reverse voltage for this device is 35V, according to the applicable device specifications.This device can read current voltages up to 0.1A.

BA783-HG3-08 Features


a maximum output current voltage of 0.1A


BA783-HG3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BA783-HG3-08 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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