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BA779-2-HG3-08

BA779-2-HG3-08

BA779-2-HG3-08

Vishay Semiconductor Diodes Division

PIN - 1 Pair Series Connection 0.5pF @ 0V 100MHz 125°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3

SOT-23

BA779-2-HG3-08 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 8.107964mg
Diode Element Material SILICON
Operating Temperature125°C TJ
PackagingTape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.80
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Reference Standard AEC-Q101
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Max Current Rating 50mA
Diode Type PIN - 1 Pair Series Connection
Forward Current50mA
Application ATTENUATOR
Forward Voltage1V
Capacitance @ Vr, F 0.5pF @ 0V 100MHz
Reverse Voltage30V
Frequency Band HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Resistance @ If, F 50Ohm @ 1.5mA 100MHz
Diode Capacitance-Max 0.5pF
Minority Carrier Lifetime-Nom 4 μs
Diode Res Test Current 1.5mA
RoHS StatusROHS3 Compliant
In-Stock:4742 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BA779-2-HG3-08 Product Details

BA779-2-HG3-08 Overview


The forward voltage should be kept above 1V V.

BA779-2-HG3-08 Features




BA779-2-HG3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
BA779-2-HG3-08 applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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