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BA683-GS18

BA683-GS18

BA683-GS18

Vishay Semiconductor Diodes Division

PIN - Single 1.2pF @ 3V 100MHz 150°C TJ 2 Terminations SILICON 250 END Tape & Reel (TR) DO-213AC, MINI-MELF, SOD-80

SOT-23

BA683-GS18 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case DO-213AC, MINI-MELF, SOD-80
Surface MountYES
Diode Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2015
JESD-609 Code e2
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver (Sn/Ag)
HTS Code8541.10.00.60
Subcategory Rectifier Diodes
Technology PLANAR DOPED BARRIER
Terminal Position END
Terminal FormWRAP AROUND
Peak Reflow Temperature (Cel) 250
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count2
JESD-30 Code O-LELF-R2
Qualification StatusNot Qualified
Number of Elements 1
Diode Type PIN - Single
Case Connection ISOLATED
Current - Max 100mA
JEDEC-95 Code DO-213AA
Capacitance @ Vr, F 1.2pF @ 3V 100MHz
Forward Voltage-Max 1V
Voltage - Peak Reverse (Max) 35V
Frequency Band VERY HIGH FREQUENCY
Resistance @ If, F 900mOhm @ 10mA 200MHz
Diode Capacitance-Max 1.2pF
RoHS StatusROHS3 Compliant
In-Stock:2622 items

BA683-GS18 Product Details

BA683-GS18 Overview


In this device, the maximum current is 100mA mA.RF diode can be applied a maximum voltage of 1V.Based on its applicable specifications, this device operates at 35V peak reverse voltage.

BA683-GS18 Features


from a maximum current of 100mA volts
1V forward voltage


BA683-GS18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BA683-GS18 applications of RF diodes.


  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer

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