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1N5257B-TAP

1N5257B-TAP

1N5257B-TAP

Vishay Semiconductor Diodes Division

58Ohm ±5% 33V 100nA @ 25V -65°C~175°C 500mW DO-204AH, DO-35, Axial

SOT-23

1N5257B-TAP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Contact PlatingSilver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Number of Pins 2
Operating Temperature-65°C~175°C
PackagingTape & Box (TB)
Series Automotive, AEC-Q101
Published 2009
Tolerance ±5%
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation500mW
Pin Count2
Impedance58Ohm
Element ConfigurationSingle
Current - Reverse Leakage @ Vr 100nA @ 25V
Power Dissipation500mW
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200mA
Max Reverse Leakage Current 100nA
Impedance-Max 58Ohm
Test Current 3.8mA
Zener Voltage 33V
Voltage Tolerance5%
ESD Protection No
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:46535 items

Pricing & Ordering

QuantityUnit PriceExt. Price

1N5257B-TAP Product Details

1N5257B-TAP Overview


An electrical device such as this requires reverse leakage current of 100nA @ 25V.A maximum reverse leakage current is reached at 100nA.As soon as the maximum voltage - Forward (Vf) is supplied, it reaches 1.1V @ 200mA V.

1N5257B-TAP Features


reverse leakage current of 100nA @ 25V
100nA @ 25V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA


1N5257B-TAP Applications


There are a lot of Vishay Semiconductor Diodes Division
1N5257B-TAP applications of zener single diodes.


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