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10ETS12PBF

10ETS12PBF

10ETS12PBF

Vishay

RECTIFIER DIODE SILICON 260 SINGLE Tube

SOT-23

10ETS12PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountNO
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 1200
Peak Reverse Repetitive Voltage (V) 1200
Maximum Continuous Forward Current (A) 10
Peak Non-Repetitive Surge Current (A) 160
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 50
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package TO-220AC
Military No
Mounting Through Hole
Package Height 9.02(Max)
Package Length 10.51(Max)
Package Width 4.65(Max)
PCB changed 2
Tab Tab
Package Type TO-220AC
Manufacturer Vishay
Package Shape RECTANGULAR
PackagingTube
JESD-609 Code e3
Pbfree Code Yes
Part StatusObsolete
ECCN Code EAR99
Type Switching Diode
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal FormTHROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count2
JESD-30 Code R-PSFM-T2
Qualification StatusNot Qualified
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection CATHODE
Output Current-Max 10 A
Application HIGH VOLTAGE HIGH POWER
Number of Phases 1
Rep Pk Reverse Voltage-Max 1200 V
JEDEC-95 Code TO-220AC
Non-rep Pk Forward Current-Max 200 A
RoHS StatusYes with exemptions
In-Stock:3139 items

10ETS12PBF Product Details

10ETS12PBF Overview


According to the datasheets, the peak forward voltage is 1.1.The maximum continuous forward current that this device consumes at any given time is about 10.A DC reverse voltage less than 1200 must be used for operation.Diode can read a maximum output current voltage of 10 A using this device.

10ETS12PBF Features


the forward peak voltage is 1.1
a maximum output current voltage of 10 A


10ETS12PBF Applications


There are a lot of Vishay
10ETS12PBF applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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