Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TPD3215M

TPD3215M

TPD3215M

Transphorm

GANFET 2N-CH 600V 70A MODULE

SOT-23

TPD3215M Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case Module
Operating Temperature-40°C~150°C TJ
PackagingBulk
Published 2016
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Power - Max 470W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 34m Ω @ 30A, 8V
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
Drain to Source Voltage (Vdss) 600V
FET Feature GaNFET (Gallium Nitride)
In-Stock:90 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$178.83000$178.83
10$172.66200$1726.62

About TPD3215M

The TPD3215M from Transphorm is a high-performance microcontroller designed for a wide range of embedded applications. This component features GANFET 2N-CH 600V 70A MODULE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TPD3215M, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News