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TLP3409S(TP,E

TLP3409S(TP,E

TLP3409S(TP,E

Toshiba Semiconductor and Storage

TLP3409S(TP,E datasheet pdf and Solid State Relays product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TLP3409S(TP,E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 4-SMD (0.079, 2.00mm)
PackagingTape & Reel (TR)
Published 2017
Series TLP3409S
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
HTS Code8541.40.95.00
Reach Compliance Code unknown
Termination Style SMD (SMT) Tab
Output Type AC, DC
Circuit SPST-NO (1 Form A)
Voltage - Input 1.27VDC
Optoelectronic Device Type TRANSISTOR OUTPUT SSR
Voltage - Load 0V~100V
On-State Resistance (Max) 600mOhm
Load Current650mA
RoHS StatusRoHS Compliant
In-Stock:1463 items

Pricing & Ordering

QuantityUnit PriceExt. Price

TLP3409S(TP,E Product Details

TLP3409S(TP,E Description


A photo MOSFET is optically connected to an infrared light emitting diode to create the TLP3409S photorelay. It comes packaged in an S-VSON4 container. The TLP3409S is perfect for switching applications in high-speed testers because it has a very low on-resistance and on/off switching of current up to 0.65 A.



TLP3409S Features


S-VSON4: height = 1.75 mm (max), area = 1.45 mm × 2.0 mm (typ.)

Normally opened (1-Form-A)

OFF-state output terminal voltage: 100 V (min)

Trigger LED current: 3.0 mA (max)

ON-state current: 0.65 A (max)

ON-state resistance: 0.6 Ω (max)

Isolation voltage: 500 Vrms (min)

Halogen-free



TLP3409S Applications


Probe Cards

ATE (Automatic Test Equipment)

Measuring Instruments

High-Speed Logic IC Testers

High-Speed Memory Testers


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