TLP290-4(GB,E) Description
The Toshiba TLP290-4(GB, E) consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP290-4(GB, E) is housed in the SO16 package, a very small and thin coupler. Since TLP290-4(GB, E) is guaranteed wide operating temperatures (Ta=-55 to 110˚C), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.
TLP290-4(GB,E) Features
Collector-Emitter Voltage: 80 V (min)
Current Transfer Ratio: 50% (min)
Rank GB: 100% (min)
Isolation Voltage: 2500 Vrms (min)
Guaranteed performance over -55 to 110 ˚C
UL (under preparation): UL1577, File No. E67349
UL (under preparation): CSA Component Acceptance Service
TLP290-4(GB,E) Applications
Automotive
Infotainment & cluster
Communications equipment
Wireless infrastructure
Industrial
Lighting
