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RN4985FE,LF(CT

RN4985FE,LF(CT

RN4985FE,LF(CT

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR2.2KOHM Q1BER

SOT-23

RN4985FE,LF(CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz 200MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS StatusNon-RoHS Compliant
In-Stock:26670 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.213289$0.213289
10$0.201216$2.01216
100$0.189826$18.9826
500$0.179081$89.5405
1000$0.168945$168.945

About RN4985FE,LF(CT

The RN4985FE,LF(CT from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features NPN + PNP BRT Q1BSR2.2KOHM Q1BER.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN4985FE,LF(CT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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