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RN2907FE,LF(CT

RN2907FE,LF(CT

RN2907FE,LF(CT

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

SOT-23

RN2907FE,LF(CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
PackagingCut Tape (CT)
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation100mW
Polarity PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -6V
hFE Min 80
Resistor - Base (R1) 10k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS StatusRoHS Compliant
In-Stock:147984 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About RN2907FE,LF(CT

The RN2907FE,LF(CT from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN2907FE,LF(CT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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