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RN2711,LF

RN2711,LF

RN2711,LF

Toshiba Semiconductor and Storage

PNP X 2 BRT, Q1BSR=10K?, Q1BER=I

SOT-23

RN2711,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Resistor - Base (R1) 10k Ω
In-Stock:20845 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.297613$0.297613
10$0.280767$2.80767
100$0.264874$26.4874
500$0.249882$124.941
1000$0.235737$235.737

About RN2711,LF

The RN2711,LF from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features PNP X 2 BRT, Q1BSR=10K?, Q1BER=I.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN2711,LF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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