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RN2107MFV,L3F(CT

RN2107MFV,L3F(CT

RN2107MFV,L3F(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

SOT-23

RN2107MFV,L3F(CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 150mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 47 k Ω
In-Stock:47228 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.179397$0.179397
10$0.169242$1.69242
100$0.159662$15.9662
500$0.150625$75.3125
1000$0.142099$142.099

About RN2107MFV,L3F(CT

The RN2107MFV,L3F(CT from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS PREBIAS PNP 50V 0.1A VESM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN2107MFV,L3F(CT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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