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RN2102,LF(CT

RN2102,LF(CT

RN2102,LF(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W SSM

SOT-23

RN2102,LF(CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation100mW
Power - Max 100mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS StatusRoHS Compliant
In-Stock:172048 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.382265$0.382265
10$0.360627$3.60627
100$0.340214$34.0214
500$0.320957$160.4785
1000$0.302789$302.789

About RN2102,LF(CT

The RN2102,LF(CT from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS PREBIAS PNP 0.1W SSM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN2102,LF(CT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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