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RN1961(TE85L,F)

RN1961(TE85L,F)

RN1961(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

SOT-23

RN1961(TE85L,F) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation200mW
Number of Elements 2
Power - Max 200mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω
RoHS StatusRoHS Compliant
In-Stock:18750 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About RN1961(TE85L,F)

The RN1961(TE85L,F) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS 2NPN PREBIAS 0.2W US6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN1961(TE85L,F), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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