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RN1911FE,LF(CT

RN1911FE,LF(CT

RN1911FE,LF(CT

Toshiba Semiconductor and Storage

NPN X 2 BRT, Q1BSR=10K?, Q1BER=I

SOT-23

RN1911FE,LF(CT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 10k Ω
In-Stock:31229 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.238090$0.23809
10$0.224613$2.24613
100$0.211899$21.1899
500$0.199906$99.953
1000$0.188589$188.589

About RN1911FE,LF(CT

The RN1911FE,LF(CT from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features NPN X 2 BRT, Q1BSR=10K?, Q1BER=I.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN1911FE,LF(CT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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