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RN1906FE(T5L,F,T)

RN1906FE(T5L,F,T)

RN1906FE(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

SOT-23

RN1906FE(T5L,F,T) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
PackagingTape & Reel (TR)
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
In-Stock:2412 items

About RN1906FE(T5L,F,T)

The RN1906FE(T5L,F,T) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS 2NPN PREBIAS 0.1W ES6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN1906FE(T5L,F,T), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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