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MT3S20P(TE12L,F)

MT3S20P(TE12L,F)

MT3S20P(TE12L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1GHZ PW-MINI

SOT-23

MT3S20P(TE12L,F) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation1.8W
Reach Compliance Code unknown
Configuration Single
Power - Max 1.8W
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Collector Emitter Breakdown Voltage12V
Gain 16.5dB
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
RoHS StatusRoHS Compliant
In-Stock:1603 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.889514$1.889514
10$1.782560$17.8256
100$1.681660$168.166
500$1.586472$793.236
1000$1.496672$1496.672

About MT3S20P(TE12L,F)

The MT3S20P(TE12L,F) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS RF NPN 12V 1GHZ PW-MINI.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MT3S20P(TE12L,F), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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