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MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

SOT-23

MT3S111P(TE12L,F) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface MountYES
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Configuration Single
Power - Max 1W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 10.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 6000MHz
Frequency - Transition 8GHz
Power Dissipation-Max (Abs) 0.3W
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
RoHS StatusRoHS Compliant
In-Stock:7475 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About MT3S111P(TE12L,F)

The MT3S111P(TE12L,F) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF TRANS NPN 6V 8GHZ PW-MINI.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MT3S111P(TE12L,F), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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