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JDP4P02AT(TE85L)

JDP4P02AT(TE85L)

JDP4P02AT(TE85L)

Toshiba Semiconductor and Storage

PIN - 2 Independent 0.4pF @ 1V 1MHz 150°C TJ Tape & Reel (TR) 4-SMD, Flat Leads

SOT-23

JDP4P02AT(TE85L) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 4-SMD, Flat Leads
Surface MountYES
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory PIN Diodes
Max Current Rating 50mA
Diode Type PIN - 2 Independent
Capacitance @ Vr, F 0.4pF @ 1V 1MHz
Voltage - Peak Reverse (Max) 30V
Breakdown Voltage-Min 30V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.3pF
Resistance @ If, F 1.5Ohm @ 10mA 100MHz
Diode Res Test Current 10mA
Diode Res Test Frequency 100MHz
RoHS StatusRoHS Compliant
In-Stock:3018 items

JDP4P02AT(TE85L) Product Details

JDP4P02AT(TE85L) Overview


The maximum reverse voltage of this device is in accordance with its applicable specifications.The device may run at its lowest breakdown voltage of 30V occasionally.Ideally, the reverse test voltage should be within 1V.

JDP4P02AT(TE85L) Features


at its lowest breakdown voltage of 30V


JDP4P02AT(TE85L) Applications


There are a lot of Toshiba Semiconductor and Storage
JDP4P02AT(TE85L) applications of RF diodes.


  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators

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