HN4C51J(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
HN4C51J(TE85L,F) Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Number of Pins
5
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
300mW
Polarity
NPN
Element Configuration
Dual
Power - Max
300mW
Gain Bandwidth Product
100MHz
Transistor Type
2 NPN (Dual) Common Base
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Radiation Hardening
No
RoHS Status
RoHS Compliant
In-Stock:14690 items
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Quantity
Unit Price
Ext. Price
HN4C51J(TE85L,F) Product Details
HN4C51J(TE85L,F) Applications
High voltage: VCEO = 120V
High hFE : hFE = 200 to 700
Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Low noise: NF = 1dB(type.)
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