HN3C51F-BL(TE85L,F datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
HN3C51F-BL(TE85L,F Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Number of Pins
6
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
300mW
Frequency
100MHz
Number of Elements
2
Polarity
NPN
Element Configuration
Dual
Power Dissipation
300mW
Gain Bandwidth Product
100MHz
Transistor Type
2 NPN (Dual)
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
Radiation Hardening
No
RoHS Status
RoHS Compliant
In-Stock:2786 items
HN3C51F-BL(TE85L,F Product Details
HN3C51F-BL(TE85L,F Description
The HN3C51F-BL (TE85L, F is a Silicon NPN Epitaxial Type TOSHIBA Transistor.
