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HN3C10FUTE85LF

HN3C10FUTE85LF

HN3C10FUTE85LF

Toshiba Semiconductor and Storage

Bipolar Transistors - BJT Transistor Lo Freq Small-Signal Amp

SOT-23

HN3C10FUTE85LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
PackagingCut Tape (CT)
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation200mW
Power - Max 200mW
Transistor Type 2 NPN (Dual)
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA 10V
Collector Emitter Breakdown Voltage12V
Gain 11.5dB
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS StatusRoHS Compliant
In-Stock:12066 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.335138$2.335138
10$2.202960$22.0296
100$2.078264$207.8264
500$1.960627$980.3135
1000$1.849648$1849.648

About HN3C10FUTE85LF

The HN3C10FUTE85LF from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - BJT Transistor Lo Freq Small-Signal Amp.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HN3C10FUTE85LF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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