HN1D03FTE85LF Overview
In order to prevent the surge current from exceeding 2A, it should be monitored.Its maximal reverse leakage current is 500nA, which is the current from that semiconductor device when the device is reverse biased.300mW heat is generated at the highest rate from this electronic or electrical device (energy waste).
HN1D03FTE85LF Features
HN1D03FTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage HN1D03FTE85LF applications of rectifier diode array.
- Rectifiers in switch mode power supplies (SMPS)
- General Rectification
- Rectifier for drives applications
- Rectifiers for UBS
- Free wheeling diode in low voltage converters
- Battery chargers
- Crowbar applications
