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HN1C03FU-B,LF

HN1C03FU-B,LF

HN1C03FU-B,LF

Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO20

SOT-23

HN1C03FU-B,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 4mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 300mA
Frequency - Transition 30MHz
RoHS StatusNon-RoHS Compliant
In-Stock:19080 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.39000$0.39
500$0.3861$193.05
1000$0.3822$382.2
1500$0.3783$567.45
2000$0.3744$748.8
2500$0.3705$926.25

About HN1C03FU-B,LF

The HN1C03FU-B,LF from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features NPN + NPN IND. TRANSISTOR VCEO20.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HN1C03FU-B,LF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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