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HN1B04FU-Y,LF

HN1B04FU-Y,LF

HN1B04FU-Y,LF

Toshiba Semiconductor and Storage

Trans Gp Bjt Npn/pnp 50V 0.15A 200MW 6-PIN Us T/r

SOT-23

HN1B04FU-Y,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature125°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 150MHz
RoHS StatusRoHS Compliant
In-Stock:25137 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.244000$0.244
10$0.230189$2.30189
100$0.217159$21.7159
500$0.204867$102.4335
1000$0.193271$193.271

About HN1B04FU-Y,LF

The HN1B04FU-Y,LF from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans Gp Bjt Npn/pnp 50V 0.15A 200MW 6-PIN Us T/r.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HN1B04FU-Y,LF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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