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CUHS10F60,H3F

CUHS10F60,H3F

CUHS10F60,H3F

Toshiba Semiconductor and Storage

Schottky Barrier Diode Silicon Epitaxial

SOT-23

CUHS10F60,H3F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 2-SMD, Flat Lead
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 40μA @ 60V
Operating Temperature - Junction 150°C Max
Voltage - DC Reverse (Vr) (Max) 60V
Current - Average Rectified (Io) 1A
Capacitance @ Vr, F 130pF @ 0V 1MHz
RoHS StatusRoHS Compliant
In-Stock:16804 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About CUHS10F60,H3F

The CUHS10F60,H3F from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Schottky Barrier Diode Silicon Epitaxial.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the CUHS10F60,H3F, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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