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2SK2917(F)

2SK2917(F)

2SK2917(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 18A TO-3PN

SOT-23

2SK2917(F) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Operating Temperature150°C TJ
PackagingTube
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 90W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusRoHS Compliant
In-Stock:3855 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.881814$1.881814
10$1.775296$17.75296
100$1.674807$167.4807
500$1.580007$790.0035
1000$1.490573$1490.573

About 2SK2917(F)

The 2SK2917(F) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 500V 18A TO-3PN.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2SK2917(F), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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