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1SS387,L3F

1SS387,L3F

1SS387,L3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA ESC

SOT-23

1SS387,L3F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Base Part Number 1SS387
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 80V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Operating Temperature - Junction 125°C Max
Voltage - DC Reverse (Vr) (Max) 80V
Max Reverse Voltage (DC) 80V
Average Rectified Current100mA
Reverse Recovery Time 4 ns
Capacitance @ Vr, F 3pF @ 0V 1MHz
RoHS StatusRoHS Compliant
In-Stock:30332 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.193000$0.193
10$0.182075$1.82075
100$0.171769$17.1769
500$0.162047$81.0235
1000$0.152874$152.874

About 1SS387,L3F

The 1SS387,L3F from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 80V 100MA ESC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1SS387,L3F, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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