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TRS10A65F,S1Q

TRS10A65F,S1Q

TRS10A65F,S1Q

Toshiba

Silicon Carbide Schottky 36pF @ 650V, 1MHz Tube TO-220F-2L

SOT-23

TRS10A65F,S1Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case TO-220F-2L
Mounting Type Through Hole
Supplier Device Package TO-220F-2L
Material SiC
Mounting Style Through Hole
ECCN (US) EAR99
HTS 8541.10.00.80
Peak Reverse Repetitive Voltage (V) 650
Maximum Continuous Forward Current (A) 10
Peak Non-Repetitive Surge Current (A) 79
Peak Forward Voltage (V) 1.6
Peak Reverse Current (uA) 50
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Supplier Package TO-220F
Military No
Mounting Through Hole
Package Height 15
Package Length 10
Package Width 4.5
PCB changed 2
Tab Tab
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature -
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Package Tube
Base Product Number TRS10A65
Mfr Toshiba Semiconductor and Storage
Product Status Active
PackagingTube
Series -
Type Schottky Diode
Subcategory Diodes & Rectifiers
Technology SiC
Pin Count2
Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 10 A
Operating Temperature - Junction 175°C (Max)
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Product TypeSchottky Diodes & Rectifiers
Capacitance @ Vr, F 36pF @ 650V, 1MHz
Reverse Recovery Time (trr) 0 ns
Product Schottky Silicon Carbide Diodes
Vf - Forward Voltage 1.45 V
Product CategorySchottky Diodes & Rectifiers
RoHS StatusRoHS Compliant
In-Stock:1434 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.527035$2.527035
10$2.383995$23.83995
100$2.249052$224.9052
500$2.121747$1060.8735
1000$2.001649$2001.649

TRS10A65F,S1Q Product Details

TRS10A65F,S1Q Overview


The datasheets state that the peak forward voltage is 1.6.A continuous forward current of about 10 can be consumed by this device at any given time.

TRS10A65F,S1Q Features


the forward peak voltage is 1.6


TRS10A65F,S1Q Applications


There are a lot of Toshiba
TRS10A65F,S1Q applications of RF diodes.


  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits

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