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RN4987FE,LF(CB

RN4987FE,LF(CB

RN4987FE,LF(CB

Toshiba

RN4987FE,LF(CB datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba stock available on our website

SOT-23

RN4987FE,LF(CB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Published 2014
Power Dissipation-Max 100mW
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
RoHS StatusRoHS Compliant
In-Stock:4928 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.198877$0.198877
10$0.187620$1.8762
100$0.177000$17.7
500$0.166981$83.4905
1000$0.157529$157.529

About RN4987FE,LF(CB

The RN4987FE,LF(CB from Toshiba is a high-performance microcontroller designed for a wide range of embedded applications. This component features RN4987FE,LF(CB datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RN4987FE,LF(CB, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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