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1SS403,H3F(B

1SS403,H3F(B

1SS403,H3F(B

Toshiba

SOT-23

1SS403,H3F(B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 200
Peak Reverse Repetitive Voltage (V) 250
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 1
Maximum Diode Capacitance (pF) 3
Maximum Power Dissipation (mW) 200
Peak Reverse Recovery Time (ns) 60
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
AEC Qualified Number AEC-Q101
Standard Package Name USC
Supplier Package USC
Military No
Mounting Surface Mount
Package Height 0.9
Package Length 1.7
Package Width 1.25
PCB changed 2
Lead Shape Gull-wing
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS Compliant
In-Stock:3344 items

1SS403,H3F(B Product Details

1SS403,H3F(B Overview


In the datasheets, 1.2 is stated as the peak forward voltage.A continuous forward current of 0.1 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 200.

1SS403,H3F(B Features


the forward peak voltage is 1.2


1SS403,H3F(B Applications


There are a lot of Toshiba
1SS403,H3F(B applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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