TM4C1294NCPDTI3R Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
TM4C1294NCPDTI3R Features
Max rDS(on) = 0.8 m at VGS = 10 V, ID = 50 A
Max rDS(on) = 1.1 m at VGS = 6 V, ID = 42 A
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant
TM4C1294NCPDTI3R Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch