TLV75533PDBVR Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
TLV75533PDBVR Features
Input Voltage Range: 1.45 V to 5.5 V
Low IQ: 25 |ìA (Typical)
Low Dropout: ¨C 238 mV (Maximum) at 500 mA (3.3 VOUT)
Output Accuracy: 1% (Maximum at 85??C)
Built-In Soft-Start With Monotonic VOUT Rise
Foldback Current Limit
Active Output Discharge
High PSRR: 46 dB at 100 kHz
Stable With a 1-|ìF Ceramic Output Capacitor
Packages:
¨C 2.9-mm ?á 1.6-mm SOT-23-5
¨C 1-mm x 1-mm X2SON-4
¨C 2 mm ?á 2 mm WSON-6
TLV75533PDBVR Applications
Switching applications
