LMG1205YFXT Description
In a synchronous buck, boost, or half-bridge configuration, the LMG1205YFXT is designed to drive both the high-side and low-side enhancement mode Gallium Nitride (GaN) FETs. For optimum control flexibility, the device incorporates an incorporated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs. The high-side bias voltage is generated via a bootstrap approach and is internally clamped at 5 V, preventing the gate voltage from exceeding enhancement-mode GaN FETs' maximum gate-source voltage rating. The LMG1205YFXT's inputs are compatible with TTL logic and can handle input voltages of up to 14 V regardless of the VDD voltage. The split-gate outputs of the LMG1205YFXT allow you to change the turnon and turnoff strength individually. Furthermore, the LMG1205YFXT's robust sink capacity keeps the gate in a low state during switching, preventing inadvertent turn-on. The LMG1205YFXT has a frequency range of many MHz. The LMG1205YFXT comes in a 12-pin DSBGA package, which has a small footprint and low package inductance.
LMG1205YFXT Features
Low Power Consumption
Supply Rail Undervoltage Lockout
1.2-A Peak Source, 5-A Sink Current
Fast Propagation Times (35 ns Typical)
0.6-? Pulldown, 2.1-? Pullup Resistance
Internal Bootstrap Supply Voltage Clamping
Split Outputs for Adjustable Turnon, Turnoff Strength
Excellent Propagation Delay Matching (1.5 ns Typical)
Independent High-Side and Low-Side TTL Logic Inputs
High-Side Floating Bias Voltage Rail Operates up to 100 VDC
LMG1205YFXT Applications
Synchronous Buck Converters
Half and Full-Bridge Converters
Two-Switch Forward Converters
Current-Fed Push-Pull Converters
Forward with Active Clamp Converters
