DRV8872DDARQ1 Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET? Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
Surface mounting with vapor phase, infrared, or wave soldering processes is possible with the D-Pak. For through-hole mounting applications, the straight lead version (IRFU series) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable. The ability to limit current to a known level can significantly reduce the system power requirements and bulk capacitance needed to maintain stable voltage, especially for motor startup and stall conditions.
DRV8872DDARQ1 Features
Wide 6.8-V to 45-V Operating Voltage
565-mΩ Typical RDS(on) (HS + LS)
3.6-A Peak Current Drive
PWM Control Interface
Integrated Current Regulation
Low-Power Sleep Mode
Fault Status Output Pin
Small Package and Footprint
DRV8872DDARQ1 Applications
Automotive Infotainment
HUD Projector Adjustment
Motorized Shifter Knobs
Piezo Horn Driver
