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CSD25301W1015

CSD25301W1015

CSD25301W1015

Texas Instruments

CSD25301W1015 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD25301W1015 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal FormBALL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD25301
Pin Count6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating ModeENHANCEMENT MODE
Power Dissipation1.5W
Turn On Delay Time4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time2ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.22Ohm
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Nominal Vgs 750 mV
Feedback Cap-Max (Crss) 40 pF
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:1305 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.211630$4.21163
10$3.973235$39.73235
100$3.748335$374.8335
500$3.536166$1768.083
1000$3.336005$3336.005

CSD25301W1015 Product Details

CSD25301W1015 Description


The device's design aims to produce the lowest gate charge and on resistance while maintaining outstanding thermal properties in an extremely low profile. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.



CSD25301W1015 Features


?Lowest Possible Qg and Qgd


?Minimum Footprint


?Small Profile Height of 0.62 mm


?Bp Free


? RoHS conformant


?Free of Halogen


?CSP Wafer Level Package 1 x 1.5 mm



CSD25301W1015 Applications


?Management of batteries


?Charge Switch


?Battery Security


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