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CSD18513Q5AT

CSD18513Q5AT

CSD18513Q5AT

Texas Instruments

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.3m Ω @ 19A, 10V ±20V 4280pF @ 20V 61nC @ 10V 40V 8-PowerTDFN

SOT-23

CSD18513Q5AT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface MountYES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18513
Number of Elements 1
Power Dissipation-Max 96W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4280pF @ 20V
Current - Continuous Drain (Id) @ 25°C 124A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0053Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 106 mJ
Feedback Cap-Max (Crss) 231 pF
Length 4.9mm
Width 6mm
Thickness 1mm
RoHS StatusROHS3 Compliant
In-Stock:5239 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.43000$1.43
500$1.4157$707.85
1000$1.4014$1401.4
1500$1.3871$2080.65
2000$1.3728$2745.6
2500$1.3585$3396.25

CSD18513Q5AT Product Details

CSD18513Q5AT Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 106 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4280pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [22A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

CSD18513Q5AT Features


the avalanche energy rating (Eas) is 106 mJ
based on its rated peak drain current 400A.
a 40V drain to source voltage (Vdss)


CSD18513Q5AT Applications


There are a lot of Texas Instruments
CSD18513Q5AT applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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