CSD16325Q5C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
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CSD16325Q5C Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 4 weeks ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Base Part Number
CSD16325
Pin Count
8
Number of Elements
1
Power Dissipation-Max
3.1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.1W
Case Connection
DRAIN
Turn On Delay Time
10.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2m Ω @ 30A, 8V
Vgs(th) (Max) @ Id
1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4000pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C
33A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 4.5V
Rise Time
16ns
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
3V 8V
Vgs (Max)
+10V, -8V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
1.1V
Gate to Source Voltage (Vgs)
10V
Drain Current-Max (Abs) (ID)
33A
Drain-source On Resistance-Max
0.0029Ohm
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
500 mJ
Nominal Vgs
1.1 V
Height
1.05mm
Length
5mm
Width
6mm
Thickness
1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:2659 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.392925
$2.392925
10
$2.257476
$22.57476
100
$2.129695
$212.9695
500
$2.009146
$1004.573
1000
$1.895420
$1895.42
CSD16325Q5C Product Details
CSD16325Q5C Description
CSD16325Q5C is an N-channel Power MOSFET transistor from the manufacturer Texas Instrument with a drain to source voltage of 25V. The operating temperature of the CSD16325Q5C is -55°C~150°C TJ and its maximum power dissipation is 3.1W Ta. The NexFET? power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
CSD16325Q5C Features
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
CSD16325Q5C Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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