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TPUH6D S1G

TPUH6D S1G

TPUH6D S1G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A TO277A

SOT-23

TPUH6D S1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-277, 3-PowerDFN
Supplier Device Package TO-277A (SMPC)
PackagingDigi-Reel®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.05V @ 6A
Operating Temperature - Junction -55°C~175°C
Voltage - DC Reverse (Vr) (Max) 200V
Current - Average Rectified (Io) 6A
Reverse Recovery Time 45ns
Capacitance @ Vr, F 50pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:6699 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.881544$0.881544
10$0.831645$8.31645
100$0.784571$78.4571
500$0.740161$370.0805
1000$0.698266$698.266

About TPUH6D S1G

The TPUH6D S1G from Taiwan Semiconductor Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 200V 6A TO277A.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TPUH6D S1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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